HT2000FD can deposit high quality epitaxial films at a low cost, contributing in improved performance and cost reduction of power devices. TH2000F is an innovative, highly efficient and energy-saving epitaxial reactor capable of depositing films with a thickness of several micrometers to more than 150 µm continuously at a high speed by means of a vertical gas flow and high-speed wafer rotation.

Realize high-speed growth of ultra-thick epi film.

The reactor realized 8.5µm/min. of high-speed growth and less than ±1% of thickness uniformity simultaneously for 170µm of ultra-thick film.