|
Symbol |
Parameter |
Value |
Units |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
+30 |
V |
|
IC |
Continuous Collector Current( TC=25℃) |
55 |
A |
|
Continuous Collector Current ( TC=100℃) |
30 |
A |
|
|
ICM |
Pulsed Collector Current (Note 1) |
100 |
A |
|
IF |
Diode Continuous Forward Current( TC=100℃) |
30 |
A |
|
IFM |
Diode Maximum Forward Current (Note 1) |
100 |
A |
|
tsc |
Short Circuit Withstand Time |
10 |
us |
|
PD |
Maximum Power Dissipation( TC=25℃) |
300 |
W |
|
Maximum Power Dissipation( TC=100℃) |
120 |
W |
|
|
TJ |
Operating Junction Temperature Range |
-55 to +150 |
℃ |
|
TSTG |
Storage Temperature Range |
-55 to +150 |
℃ |
Thermal Characteristics
|
Symbol |
Parameter |
Max. |
Units |
|
Rth j-c |
Thermal Resistance, Junction to case for IGBT |
0.42 |
℃/W |
|
Rth j-c |
Thermal Resistance, Junction to case for Diode |
0.83 |
℃/W |
|
Rth j-a |
Thermal Resistance, Junction to Ambient |
40 |
℃/W |