This ICPCVD process module is designed to produce high quality films at low growth temperatures, enabled through high-density remote plasmas that achieves superior film quality with low substrate damage.

• Excellent uniformity, high throughput and high precision processes
• High quality films
• Wide temperature range electrode
• Compatible with all wafer sizes up to 200mm
• Rapid change between wafer sizes
• Low cost of ownership and ease of serviceability
• Compact footprint, flexible layout
• Resistive heated electrodes with capability up to 400°C or 1200°C
• In-situ chamber cleaning and end-pointing
• Flexible vapour delivery module enabling deposition of films using liquid precursors  e.g. TiO₂ using TTIP, SiO₂ using TEOS

• Excellent quality low damage films at reduced temperatures.
• Typical materials deposited include SiO₂, Si₃N₄ and SiON, Si and SiC at substrate temperatures as low as 5ºC
• ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity
  up to 200mm wafers
• Electrodes available for temperature ranges from 5ºC to 400ºC
• Patented ICPCVD gas distribution technology
• In situ chamber cleaning with endpointing
• Flexible vapour delivery module enabling deposition of films using liquid precursors  e.g. TiO₂ using TTIP, SiO₂ using TEOS

• Wall heating reduces chamber wall deposition
• Helium backside cooling with mechanical clamping ensures uniform wafer temperatures & optimised film properties

Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

Soft pump - allows the slow pumping down of a vacuum chamber

Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability

Automatic pressure control - This controller ensures very fast and accurate pressure control

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid

TEOS liquid level sensing - level sensing is achieved using ultra sonic level sensors fitted to the TEOS canister

Wide temperature range electrode - significant design improvements to increase process performance