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    JNFP15N120M1

    Applied to the semiconductor industry:

    Sensor and Chip-Others

    Product brand

    jiaensemi

    Specification model:

    JNFP15N120M1 1200V 15A

    In stock:

    5000

    Place of origin:

    National

    Quantity:

    cut back increase

    price:

    78.00
    Transaction guarantee Secured Transactions Online banking to pay

    consumer hotline:00864001027270

    Hot products

    followed36451

    Negotiable

    followed8874

    Negotiable

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    Negotiable

    followed2247

    ¥10000.00

    Concerned Products

    Brand:jiaensemi

    model:JNFP15N120M1 1200V 15A

    Own series:Sensor and Chip-Others

     JNFP15N120M1

    IGBT模块/IGBTModule

     

     

    特性:

     

    l   10μs短路承受时间

    l   低饱和压降:VCE (sat)= 2.20V @ IC= 15A , TC=25℃

    l   低开关损耗

    l   100% RBSOA 测试(2倍额定电流)

    l   低杂散电感

    l   无铅模块,符合RoHS要求

    IGBT,逆变器/ IGBT,Inverter

    最大额定值/ Maximum Rated Values

    VCES

    集电极-发射机电压

    Collector-Emitter Blocking Voltage

    1200

    V

    VGES

    门极-发射极电压

    Gate-Emitter Voltage

    ±20

    V

    IC

    集电极直流电流

    Continuous Collector Current

    TC= 80℃,

    15

    A

    TC= 25℃

    30

    A

    ICM(1)

    集电极脉冲电流

    Peak Collector Current Repetitive

    TJ= 150℃

    30

    A

    tSC

    短路承受时间

    Short Circuit Withstand Time

    >10

    μs

    PD

    单桥臂IGBT最大耗散功率

    Maximum Power Dissipation (IGBT)

    TC= 25℃

    TJmax=150℃

    150

    W

     

    advisory

    If you have any questions before purchasing, please contact us.

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