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Current Position: Home » Equipment » Testing Equipment » Others »聚焦离子束FIB芯片的电路修改断面切割透射电镜样品制备
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    聚焦离子束FIB芯片的电路修改断面切割透射电镜样品制备

    Applied to the semiconductor industry:

    Testing Equipment-Others

    In stock:

    88

    Place of origin:

    National

    Quantity:

    cut back increase

    price:

    Negotiable
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    Own series:Testing Equipment-Others

     

     

    u主要用途
    芯片的电路修补、断面切割、透射电镜样品制备。
     
    u
     
    性能参数
    a)着陆电压范围 - 电子束:350V~30kV
                    - 离子束:500V~30kV
    b)最小分辨率 - 电子束:0.8nm/30kV
                  - 离子束:2.5nm/30kV
    c)全新的差分抽取及TOF校正功能,可实现更高分辨率的离子束成像、磨削和沉积
     
    u
     
    应用范围
    1.定点切割
    2.穿透式电子显微镜试片
    3.IC线路修补和布局验证
    4.制程上异常观察分析
    5.晶相特性观察分析
    6.故障位置定位用被动电压反差分析

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