application
Peva-600E High Precision Lift-Off Electron Beam Evaporation System is a batch of mass production equipment designed for Lift-Off process for power IC components, GaAs wafers and sub-micron precision linewidth requirements. It is mainly used in Schottky, MMIC, Ohmic, Gate metallization or ITO, SiO, SiO processes. It has a unique design of evaporation reaction chamber, which can provide higher productivity (150% increase) and more refined. Accurate and more reliable process requirements.
Characteristic
The features of AST Juchang Technology Peva-600E system include
(1) In response to various Lift-Off process requirements (Ti, Au, Al, Ni, Cr, AuGe, etc.) of power IC (Ti/Ni/Ag) and III V GaAs wafers, the Throw Distance is raised to > 26-32 inches.
(2) The thickness uniformity of Run to Run film can be controlled to <1% to ensure the overall product yield.
(3) Optimizing the design of evaporation chamber and exhaust system can effectively reduce Cycle time and improve material utilization (20%).
(4) The special designed fixture has excellent reliability for sheet manufacturing (< 100 micron).
(5) Fully automatic and intelligent PC control system to improve the automation requirement of the whole plant.
Peva-600E can also be equipped with Ion-Assisted Coating (IAD) equipment for low-temperature process. It can be used in precision coatings such as Acchromats, Fiber End Faces, Plastic Optics and MEMS wafers. At the same time, it has Lift-Off process capability of 200 mm large size, sub-micron, uniformity (+1%), more effective material utilization, higher productivity and reliability, and greatly reduced overall floor space utilization. The advantages of subtraction.
Specifications

Wafer Numbers / Sizes (108 -15) pcs / (2"- 6")for Planetary Domes 
E-Beam Power From 6 ~10 kW (Option) 
Ultimate Pressure < 1E-7 Torr 
based Pressure 2E-6 Torr within 30 mins 
Pumping System Cryopump + Rotary Vane Pump
Dry pump (Option) 
Automatic Control System Industrial HMI with Graphic User Interface
Fully PC Interface Operation(Option) 
Thickness/RateProcess Control RS-232 interfaced Real Time Controller including Sweeper, Indexer, Material, Tooling Factor, Soak, RampShutter. 
Substrate Temperature Control RT ~ 350℃ 
Non-Uniformity 5% for WIW, WTWRTR 
Power Requirement AC220V, 3 phase, 60 Hz, 80A, 
Dry N2 Requirement 1.2 kgw/cm2 
CDA Requirement 5 kgw/cm2 
Water Requirement 1.5 kgw/cm2, 20℃, 30 l/min 
Dimension (WxDxH) 1100 x 1200 x 1800 (mm) 
Weight 750 kgw