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    漏电微光显微镜分析仪emmi失效分析电流异常定位

    Applied to the semiconductor industry:

    Testing Equipment-Electricity Test-其他

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    ADVANCED

    In stock:

    100

    Place of origin:

    National

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    u主要用途
    当氧化层崩溃、静电放电破坏、闩锁效应时,产生了过量的电子和空穴结合并产生跃迁光子,由探测器通过显微镜收集这些光子并精确地定位出其位置,通常这个位置就是存在异常的缺陷位置。
    u 
    性能参数
    a)InGaAs检测器,分辨率:320*256 像素;
    b)侦测波长范围900nm - 1700nm
    c)像素尺寸:30um x 30um
    d)曝光时间 20ms - 400s
    e)放大倍率:25x, 50x, 200x ,1000x
    f)Back side EMMI
    u
     
    应用范围
     1.P-N接面漏电
     2.饱和区晶体管的热电子
     3.P-N接面崩溃
     4.闩锁效应
     5.氧化层漏电流产生的光子激发

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