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    4英寸氮化镓复合衬底 东莞中镓

    Applied to the semiconductor industry:

    Materials-Wafer-Sub-氮化镓

    Product Brand

    中镓

    In stock:

    1000

    Place of origin:

    China-广东省

    Quantity:

    cut back increase

    Price:

    Negotiable
    Transaction guarantee Secured Transactions Online banking to pay

    Brand:中镓

    Model:

    Own series:Materials-Wafer-Sub-氮化镓

    4英寸氮化镓复合衬底

    产品型号
    Item
               ST-ncY-Φ100        
    尺寸
    Size (mm)
      Φ100.0±0.5
    GaN厚度
    Thickness (μm)
       6~8,Customized
    导电类型
    Conduction Type
      Un-doped N-type  Si-doped N-type
    电阻率 (300K)
    Resistivity (Ω•cm)
      ≤ 0.5  ≤ 0.05
    晶向
    Orientation
    C-axis(0001)±0.5°   
    GaN层厚度均匀性
    GaN Thickness Uniformity
          ≤ ±5%             ≤ ±8%       ≤ ±10%
    位错密度
    Dislocation Density (cm﹣² )­
       Grade A
    Grade B
    107 108
    衬底结构
    Substrate Structure
    GaN on Sapphire(0001)   
    有效面积
    Useable Surface Area
     >90%  
    包装
    Package
    Packaged in a class 100 clean room environment.   

    Advisory

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