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产品型号
Item
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ST－ncY－Φ50
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ST－ncZ－Φ50
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ST－ncH－Φ50
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尺寸
Size (mm)
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50.8±0.5
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衬底结构
Substrate Structure
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GaN on Sapphire(0001) | |||||||||
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厚度
Thickness (um)
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Al2O3 :430±25； GaN : Customized Sized
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GaN层厚度均匀性
GaN Thickness Uniformity
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≤ ±5%
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晶向
Orientation
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C-axis(0001)±0.5°
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导电类型
Conduction Type
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Un-doped
N-type
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N-type
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High-doped
N-type
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载流子浓度
Carrier Concentration
(cm-3）
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≤2×1017
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≥1×1018 | ≥5×1018 | |||||||
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位错密度
Dislocation Density
(cm-2)
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Grade A
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Grade B
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≤5×107
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≤5×108
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| 包装
Package
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Packaged in a class 100 clean room environment. | |||||||||
