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MORSENSEMI 3英寸GaAs单晶片主要参数指标
|
Item |
Unit |
Specifications |
Remarks |
|
Crystal Growth Method |
VGF |
||
|
Dopant |
Si |
Zn-doped available |
|
|
Diameter |
inch |
2", 3", 4" & 6" |
|
|
Orientation |
2°/6°/15° off |
Other orientations available |
|
|
OF/IF |
EJ or US |
||
|
Carrier Concentration |
/cm3 |
(0.4-4)×1018 |
|
|
Mobility |
cm2/v.s |
1500-3000 |
|
|
Etch Pit Density(EPD) |
/cm2 |
＜5000 |
|
|
Laser Marking |
Upon request |
||
|
Thickness |
μm |
220-350 |
Other thickness available |
|
TTV, Bow, Warp |
＜10 |
||
|
Surface |
P/E , P/P |
||
|
Epi-Ready |
Yes |
||
|
Package |
Single or Cassette |
