New Electronic Optical System for Ultra High Resolution

MAIA3 Model 2016 is a high resolution scanning electron microscope with ultra-high surface sensitivity. It has excellent imaging capability under different acceleration voltage. MAIA3 model 2016 also has excellent performance at low voltage, especially for semiconductor device samples sensitive to electron beam and nanomaterials, which have excellent surface sensitivity and high spatial resolution. The new MAIA3 is also very suitable for the study of non-conductive samples such as biological samples in the original state.
Main features:
TriglavTM, a newly developed ultra-high resolution electron optical lens barrel, equipped with TriLensTM objective and advanced detection system
Ultra-high resolution objective (60 degree immersion lens), a new magnetic flux leakage-free analysis objective for high resolution analysis, has been redesigned for ultra-large field of view observation.
Unique non-crossing mode of electron beam combined with ultra-high resolution objective lens has achieved excellent imaging performance.
Traditional TESCAN wide field optical path design provides a variety of work and display modes.
New EquiPower * technology further improves the stability of electron beams
The new Schottky field emission electron gun can make the electron beam current up to 400 nA and realize the rapid change of the electron beam energy.
SEM Observation of 12"Wafer by Expanding Sample Chamber and Special Bracket
The patented TriBETM technology has three BSE detectors, which can collect signals from different angles. Mid-Ange BSE and In-Beam LE-BSE detectors located inside the mirror barrel are used to detect high-angle backscattered electrons at medium and axial angles, while BSE detectors in the sample chamber are used to detect backscattered electrons at large angles. And the three detectors can detect low-energy backscattering signals below 200 eV. Together, they can provide images with different contrast.
The patented TriSETM technology has three SE detectors, which optimize the acquisition of secondary electronic signals under all operating modes. The In-Beam SE detector located inside the mirror barrel can collect secondary electrons at a short working distance. The SE (BDM) detector for electron beam deceleration mode is used for ultra-high resolution imaging. In-Chamber SE detectors provide the best topographic contrast
Electron beam deceleration technology (BDT) can still have excellent resolution at low voltage of 50 eV.
Patented real-time electron beam tracking technology enables real-time optimization of electron beams
The expanded sample chamber in low vacuum mode can reach 500 Pa and can be used for imaging of non-conductive samples.
Ultra-high resolution 0.7@15keV, 1.0nm@1keV
Immersion lens system combined with non-cross electron beam mode can achieve ultra-high resolution imaging at low energy. The immersion lens can produce a strong magnetic field around the sample, which significantly reduces the aberration. The non-cross electron beam mode reduces the Boersch effect and further optimizes the electron beam to achieve a super-high resolution of 1.0nm@1keV.
Low Voltage and Ultra Low Voltage Imaging
Electron beam deceleration technology (BDT) includes electron beam deceleration mode (BDM) and a high quality intralens probe that can simultaneously acquire secondary and backscattered electron signals in this mode. In the electron beam deceleration mode, the energy of the electron beam is reduced before it reaches the surface of the sample by negative bias applied on the sample table. The lowest landing voltage can be reduced to 50 eV (0 eV under manual control). The beam deceleration mode reduces the optical distortion and enhances the performance of the electron mirror barrel. Therefore, smaller beam spot diameter and high resolution images can be obtained at low voltage. Low voltage imaging can effectively reduce the discharging effect when observing the imaging of non-conductive samples, and is also conducive to the observation of those electron beam sensitive samples and untreated samples. Under this mode, the ultimate resolution of surface morphology and composition contrast analysis can be achieved.
application
MAIA3 model 2016 is very suitable for imaging non-conductive and electron beam sensitive samples, such as biological samples in various original states. MAIA3 model 2016 can obtain highly sensitive surface topography. Its excellent low voltage performance and high resolution imaging are the best choice of SEM systems in various fields of science and technology.

material science
MAIA3 model 2016 has good resolution at low voltage, and has great advantages in characterization of nanomaterials. Especially suitable for all kinds of sensitive materials and non-conductive materials (such as ceramics, polymers, glass, fibers, etc.).
Semiconductor, Photovoltaic and Solar Cells
MAIA 3 model 2016 can be efficiently applied to failure analysis in semiconductor industry (integrated circuit, semiconductor ultra-thin chip detection, solar cells, nano-sensors, etc.)
Photolith
MAIA3 model 2016 with ultra-high resolution is also a powerful tool in the field of electron beam etching. Moreover, MAIA3 model 2016 is very suitable for photoresist imaging which is vulnerable to damage under high energy electron beam.
life sciences
AIA3 model 2016 with ultra-high resolution at low voltage can observe samples in the original state without coating conductive film.

全球支持

• TESCAN CHINA, Ltd.
• Tescan USA, Inc.
• TESCAN-UK, Ltd.
• TESCAN ORSAY FRANCE S.A.R.L.
• TESCAN BENELUX

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