高分辨率，非接触式，接近光刻

PhableR 100系统基于由Eulitha AG开发的专有PHABLE（Photonics Enabler的简称）光刻技术，这使得可以在非接触，邻近光刻系统中印刷高分辨率周期性结构。使用PhableR 100获得的分辨率基本上与DUV投影光刻系统的相同，但没有复杂和昂贵的光学和力学。例如，具有150nm半间距的线性光栅可以用新系统以高均匀性印刷。作为附加的优点，由PhableR 100系统形成的图像的实际上无限的聚焦深度意味着高分辨率图案可以以高均匀性印刷在非平坦基板上，这在光子应用中通常遇到。

PhableR 100系统可以使用工业标准铬玻璃或相移掩模曝光直径高达100mm的基板。掩模和衬底被手动地加载到系统上，并且曝光过程由机载计算机控制。可以使用可从普通供应商获得的标准i线光刻胶，正和负色调。线性或弯曲光栅，具有六边形或正方形对称性的2D光子晶体类型图案可以印刷有小于300nm的特征周期。该系统也可以像接近或接触模式中的标准掩模对准器一样使用以打印微米级结构。目标应用包括光子学研究和开发项目，用于光衍射和光谱的光栅制造，LED上的光提取图案，图案化蓝宝石衬底和滤色器。

好处

•高分辨率低于300nm间距

·全场曝光

·非接触：保护面罩免受损坏和污染

·精确无限的焦深

·适用于非平面基板（如外延晶片）

·高均匀性

·外形对齐功能

·商业化的光刻胶和材料

·常规面罩（Cr-on-glass）

·频率乘法

规格

分辨率10nm半间距（线性光栅）

晶圆尺寸高达100mm直径

掩码格式5“

照明均匀度<3％

间距范围300nm - 3μm

抗蚀剂厚度>1μm

操作手动加载 - 自动曝光

控制触摸面板

High resolution, non-contact, proximity photolithography

The PhableR 100 system is based on the proprietary PHABLE (short for Photonics Enabler) photolithographic technology developed by Eulitha AG, which makes it possible to print high-resolution periodic structures in a non-contact, proximity photolithography system. The resolution obtained with the PhableR 100 is essentially the same as that of a DUV projection lithography system, but without the complex and expensive optics and mechanics. For example, linear gratings with a half-pitch of 150nm can be printed with high uniformity with the new system. As an added advantage, the practically unlimited depth of focus of the image formed by the PhableR 100 system means that the high-resolution patterns can be printed with high uniformity even onto non-flat substrates, which are commonly encountered in photonics applications.

The PhableR 100 system can expose substrates with diameters up to 100mm using industry standard chrome-on-glass or phase-shifting masks. The mask and the substrate are loaded manually onto the system and the exposure process is controlled by an onboard computer. Standard i-line photoresists, both positive and negative tone, which are available from common vendors, can be used. Linear or curved gratings, 2D photonic-crystal type patterns with hexagonal or square symmetry can be printed with feature periods less than 300nm. The system may also be used like a standard mask-Aligner in either proximity or contact mode to print micron-scale structures. Targeted applications include research and development projects in photonics, fabrication of gratings for optical diffraction and spectroscopy, light extraction patterns on LEDs, patterned sapphire substrates and color filters.

BENEFITS

· High resolution below 300nm pitch

· Full-field exposure

· Non-contact: protects masks from damage and contamination

· Practically unlimited depth-of-focus

· Suitable for non-flat substrates (e.g. epi-wafers)

· High uniformity

· Overlay alignment capability

· Commercially available photoresists and materials

· Conventional mask (Cr-on-glass)

· Frequency multiplication

SPECIFICATIONS